SSU1N60B |
Part Number | SSU1N60B |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
Features |
• • • • • • 0.9A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSR1N60B / SSU1N60B 600 0.9 0.57 3.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/... |
Document |
SSU1N60B Data Sheet
PDF 637.04KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSU1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | SSU1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
3 | SSU102N08S-C |
SeCoS |
N-Channel MOSFET | |
4 | SSU12N70H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
5 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |