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STP16NB25 |
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| Part Number | STP16NB25 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
g Tj March 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value STP16NB25 ST P16NB25F P 250 250 ± 30 16 10 64 140 1.12 5.5 -----65 to 150 150
( 1) ISD ≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V... |
| Document |
 STP16NB25 Data Sheet
PDF 105.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP16NB25FP |
ST Microelectronics |
N-CHANNEL Power MOSFET |
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| 2 | STP16N10L |
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| 3 | STP16N50M2 |
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| 4 | STP16N60M2 |
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N-channel Power MOSFET |
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| 5 | STP16N65M2 |
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