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MP6759 |
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| Part Number | MP6759 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MP6759 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications Unit: mm · · · · · The electrodes are isolated from case. 6 IGBTs are built into... |
| Features |
current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance tf toff VF trr Rth (j-c) IF = 10 A, VGE = 0 V IF = 10 A, di/dt = −100 A/µs Transistor Diode Symbol IGES ICES VGE (off) VCE (sat) Cies tr 30 Ω ton 15 V 0V −15 V 100 Ω Test Condition VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 1 MHz Min ― ― 5 ― ― ― ― ― 300 V ― ― ― ― ― Typ. ― ― ― 2.1 720 0.3 0.4 0.2 0.4 ― ― ― ― Max ±2... |
| Document |
 MP6759 Data Sheet
PDF 150.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MP6750 |
Toshiba Semiconductor |
N-Channel IGBT |
|
| 2 | MP6752 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 3 | MP6753 |
Toshiba Semiconductor |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | MP6754 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 5 | MP6757 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|