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IXFR100N25 |
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| Part Number | IXFR100N25 |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFR 100N25 VDSS ID25 RDS(on) =... |
| Features |
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF)
l l l
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2.0 V 4 V ±200 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 27 mΩ Applications l DC-DC converters
l l l l
Battery chargers Switched-mode and resonant-mode power supplies DC choppers A... |
| Document |
 IXFR100N25 Data Sheet
PDF 81.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFR102N30P |
IXYS |
Polar HiPerFET Power MOSFET |
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| 2 | IXFR10N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
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| 3 | IXFR10N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
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| 4 | IXFR120N20 |
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 |
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| 5 | IXFR120N25P |
IXYS |
PolarHT HiPerFET Power MOSFET |
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