EN29F002 |
Part Number | EN29F002 |
Manufacturer | ETC |
Description | The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (wit... |
Features |
• 5.0V ± 10% for both read/write operation • Read Access Time - 45ns, 55ns, 70ns, and 90ns • Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors • Boot Block Top/Bottom Programming Architecture • High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.5s typical • JEDEC standard DATA polling and toggle bits feature • Hardware RESET Pin (n/a for EN29F002N) • Single Sector and Chip ... |
Document |
EN29F002 Data Sheet
PDF 267.13KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EN29F002A |
ETC |
2 Megabit (256K x 8-bit) Flash Memory | |
2 | EN29F002N |
ETC |
2 Megabit (256K x 8-bit) Flash Memory | |
3 | EN29F010 |
Eon Silicon Solution |
1 Megabit (128K x 8-bit) 5V Flash Memory | |
4 | EN29F040 |
ETC |
4 Megabit (512K x 8-bit) Flash Memory | |
5 | EN29F040A |
EON |
4 Megabit (512K x 8-bit) Flash Memory |