STP80N03L-06 |
Part Number | STP80N03L-06 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE STP80N03L-06 s s s s s s s s V DSS 30 V R DS(on) < 0.006 Ω ID 80 A (*) TYPICAL RDS(on) = 0.0... |
Features |
rature
o o
Value 30 30 ± 15 80 60 320 150 1 5 -65 to 175 175
Unit V V V A A A W W/ o C V/ns
o o
C C
( •) Pulse width limited by safe operating area March 1996 1/5 STP80N03L-06 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS EAR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche ... |
Document |
STP80N03L-06 Data Sheet
PDF 77.69KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STP80N05-09 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
2 | STP80N06-10 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | |
3 | STP80N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
4 | STP80N10F7 |
INCHANGE |
N-Channel MOSFET | |
5 | STP80N1K1K6 |
STMicroelectronics |
N-Channel Power MOSFET |