STH10NC60 |
Part Number | STH10NC60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
Features |
source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 10 6.3 40 160 1.28
Value STW10NC60 600 600 ±30 10 (*) 6.3 (*) 40 (*) 60 0.48 3.5 2500 – 55 to 150 (1)ISD ≤ 10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by Maximum Temperature Allowed Unit V V V A A A W W/°C V/ns V °C STH10NC60FI ( •)Pulse width limited by safe operating area February ... |
Document |
STH10NC60 Data Sheet
PDF 337.54KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STH10NC60FI |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
2 | STH10N80K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
3 | STH10NA50 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
4 | STH10NA50FI |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
5 | STH10NK60ZFI |
STMicroelectronics |
N-CHANNEL Power MOSFET |