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IRG4PH40UD2PBF |
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| Part Number | IRG4PH40UD2PBF |
| Manufacturer | IRF |
| Description | PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz ... |
| Features |
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
n-channel
Benefits
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diod... |
| Document |
 IRG4PH40UD2PBF Data Sheet
PDF 268.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PH40UD2 |
IRF |
Insulated Gate Bipolar Transistor |
|
| 2 | IRG4PH40UD2-E |
IRF |
Insulated Gate Bipolar Transistor |
|
| 3 | IRG4PH40UD2-EP |
IRF |
Insulated Gate Bipolar Transistor |
|
| 4 | IRG4PH40UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG4PH40UDPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|