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MTP6N60 |
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| Part Number | MTP6N60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 s s s s s V DSS 600 V R DS( on) < 1.2 Ω ID 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPE... |
| Features |
by safe operating area
November 1996
1/9
MTP6N60
THERMAL DATA
R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Aval... |
| Document |
 MTP6N60 Data Sheet
PDF 153.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP6N60E |
Motorola |
TMOS POWER FET |
|
| 2 | MTP6N60E |
ON Semiconductor |
Power Field Effect Transistor |
|
| 3 | MTP6N10 |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 4 | MTP60N05HDL |
Motorola |
TMOS POWER FET |
|
| 5 | MTP60N06HD |
Motorola |
TMOS POWER FET |
|