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SPB11N60S5 |
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| Part Number | SPB11N60S5 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
| Features |
, T stg
125 -55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
SPP11N60S5, SPB11N60S5 SPI11N60S5
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 11 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Dra... |
| Document |
 SPB11N60S5 Data Sheet
PDF 335.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB11N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPB11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPB11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPB11N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 5 | SPB11N60C3 |
INCHANGE |
N-Channel MOSFET |
|