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NE46100 |
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| Part Number | NE46100 |
| Manufacturer | NEC |
| Description | NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and... |
| Features |
• HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc Output Power, POUT (dBm) 30.0 28.0 NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA 12.5 V 10 V 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 5 10 15 20 25 5V • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure... |
| Document |
 NE46100 Data Sheet
PDF 137.62KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NE46134 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
|
| 2 | NE46134-T1 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
|
| 3 | NE461M02 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
|
| 4 | NE46234 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 5 | NE41137 |
California Eastern Laboratories |
N-Channel GaAs Dual Gate MES FET |
|