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PN163NC |
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| Part Number | PN163NC |
| Manufacturer | Panasonic Semiconductor |
| Description | Phototransistors PN163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm 3.0±0.3 1.95±0.25 1.4±0.2 0.9 0.5 For optical control systems Features High sensitivity... |
| Features |
High sensitivity Fast response : tr = 4 µs (typ.) Adoption of visible light cutoff resin Ultraminiature, thin side-view type package
ø1.1 R0.5
12 min. Not soldered 2.15 max.
2-0.5±0.15
0.3±0.15
2
2.54
1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50 –25 to +85 –30 to +100 Unit V mA mW ˚C ˚C 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Sensitivity to infrared emitters Peak ... |
| Document |
 PN163NC Data Sheet
PDF 45.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PN1608 |
Premo |
SMD Power Inductors Unshielded |
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| 2 | PN166 |
Panasonic |
Silicon PNP Phototransistor |
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| 3 | PN168 |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
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| 4 | PN100 |
TAITRON |
Small Signal General Purpose Transistors |
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| 5 | PN100 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
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