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PHX15N06E |
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| Part Number | PHX15N06E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC... |
| Features |
ssipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 60 60 30 13 8.2 52 25 150 150 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 5 UNIT K/W K/W
November 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHX15N06E
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS I... |
| Document |
 PHX15N06E Data Sheet
PDF 57.87KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | PHX10N40E |
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| 2 | PHX14NQ20T |
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| 3 | PHX18NQ11T |
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| 4 | PHX18NQ20T |
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| 5 | PHX1N40 |
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