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PHT1N60R |
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| Part Number | PHT1N60R |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hig... |
| Features |
Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tsp = 25 ˚C Tsp = 100 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C MIN. -55 MAX. 600 600 30 0.53 0.4 2.12 0.53 2.12 1.8 150 150 UNIT V V V A A A A A W ˚C ˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. UNIT Drain-source non-repetitive ID = 2 A ; VDD ≤ 50 V ; VGS = 10 V ; unclamped inductive turn-off RGS = 50 Ω energy Tj = 25˚C prior to surge Tj = 100˚C prior to surge Drain-source repetitive ID = 2 A ;... |
| Document |
 PHT1N60R Data Sheet
PDF 30.35KB |
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