PHT11N06T |
Part Number | PHT11N06T |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and... |
Features |
very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications.
PHT11N06T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 10.7 4.9 8.3 150 40 UNIT V A A W ˚C mΩ
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g s
1
2
3
LIMITING VALUES
Limi... |
Document |
PHT11N06T Data Sheet
PDF 75.35KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHT11N06LT |
NXP |
TrenchMOS transistor Logic level FET | |
2 | PHT1206 |
Vishay |
Thin Film Wraparound Chip Resistors | |
3 | PHT1N52S |
NXP |
PowerMOS transistor | |
4 | PHT1N60R |
NXP |
PowerMOS transistor | |
5 | PHT |
Vishay |
Thin Film Wraparound Chip Resistors |