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PHT11N06LT |
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| Part Number | PHT11N06LT |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications.
PHT11N06LT
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 10.7 4.9 8.3 150 40 UNIT V A A W ˚C mΩ
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g s
1
2
3
LIMITING VALUES
Limi... |
| Document |
 PHT11N06LT Data Sheet
PDF 69.16KB |
| Distributor | Stock | Price | Buy |
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