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K1S321611C-FI70 |
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| Part Number | K1S321611C-FI70 |
| Manufacturer | Samsung |
| Description | to ’48-FBGA’ on page2 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Elec... |
| Features |
• • • • • • UtRAM GENERAL DESCRIPTION The K1S321611C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 2.7V~3.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support • Package Type: 48-FBGA-6.00x8.00 PRODUCT FAMILY Power Dissipation Product Family Operating Temp. Vcc Range Spee... |
| Document |
 K1S321611C-FI70 Data Sheet
PDF 179.56KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K1S321611C-I |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory |
|
| 2 | K1S321611C |
Samsung |
2Mx16 bit Uni-Transistor Random Access Memory |
|
| 3 | K1S321615M |
Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory |
|
| 4 | K1S32161CC |
Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
|
| 5 | K1S3216B1C |
Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory |
|