HYB5117800BSJ-60 |
Part Number | HYB5117800BSJ-60 |
Manufacturer | Siemens |
Description | P-SOJ-28-3 400 mil 5 V 50 ns FPM-DRAM P-SOJ-28-3 400 mil 5 V 60 ns FPM-DRAM P-SOJ-28-3 400 mil 3.3 V 50 ns FPM-DRAM P-SOJ-28-3 400 mil 3.3 V 60 ns FPM-DRAM P-SOJ-28 400 mil V CC I/O1 I/O2 I/O3 I/O4 ... |
Features |
e die revisions “G” & “F” and organized as 2 097 152 words by 8-bits. The HYB 5(3)117800 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)117800 to be packaged in a standard SOJ-28 plastic package. Package with 400 mil width are available. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. Ordering Information Type HYB 5117800BSJ-50 HYB 5117800BSJ-... |
Document |
HYB5117800BSJ-60 Data Sheet
PDF 178.42KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HYB5117800BSJ-50 |
Siemens |
2M x 8-Bit Dynamic RAM | |
2 | HYB5117800BSJ-70 |
Siemens |
2M x 8-Bit Dynamic RAM | |
3 | HYB5117805BJ-50 |
Siemens |
2M x 8 - Bit Dynamic RAM 2k Refresh | |
4 | HYB5117805BJ-60 |
Siemens |
2M x 8 - Bit Dynamic RAM 2k Refresh | |
5 | HYB5117805BJ-70 |
Siemens |
2M x 8 - Bit Dynamic RAM 2k Refresh |