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RD10M |
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| Part Number | RD10M |
| Manufacturer | NEC |
| Description | Type RD2.0M to RD47M Series are planar type zener diodes processing an allowable power dissipation of 200 mW. 0.4 +0.1 –0.05 PACKAGE DIMENSIONS (Unit: mm) 2.8 ± 0.2 1.5 0.65 +0.1 –0.15 FEATURES • •... |
| Features |
• • Planar process VZ; Applied E24 standard. 0.95 0.95 APPLICATIONS Circuits for, Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc. 2.9 ± 0.2 2 3 Marking Power Dissipation Forward Current Junction Temperature Storage Temperature Peak Reverse Power P IF Tj Tstg PRSM 200 mW 150 mA 150°C –55 to +150°C 100 W (t = 10 µs) 1.1 to 1.4 1 . NC 2 . Anode : A SC-59 (EIAJ) 3 . Cathode: K A 2 0 to 0.1 0.16 –0.06 K 3 MAXIMUM RATINGS (TA = 25°C) 0.3 1 The information in this document is subject to change without notice. Before using this document, please confirm that... |
| Document |
 RD10M Data Sheet
PDF 67.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RD1004LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 2 | RD1006LN |
Sanyo Semicon Device |
High-Speed Switching Diode |
|
| 3 | RD1006LS |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 4 | RD1006LS-SB5 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Diode |
|
| 5 | RD100E |
NEC |
500 mW DHD ZENER DIODE DO-35 |
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