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IRF5210S |
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| Part Number | IRF5210S |
| Manufacturer | International Rectifier |
| Description | l l D VDSS = -100V RDS(on) = 0.06Ω G ID = -40A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar... |
| Features |
pate up to 2.0W in a typical surface mount application. The through-hole version (IRF5210L) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and St... |
| Document |
 IRF5210S Data Sheet
PDF 186.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF5210 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF5210 |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF5210L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF5210L |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF5210LPBF |
International Rectifier |
Power MOSFET |
|