FDD8896 |
Part Number | FDD8896 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for... |
Features |
• rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 2)... |
Document |
FDD8896 Data Sheet
PDF 428.41KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FDD8896 |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | FDD8896-F085 |
On Semiconductor |
N-Channel MOSFET | |
3 | FDD8896_F085 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
4 | FDD8870 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
5 | FDD8870-F085 |
On Semiconductor |
N-Channel MOSFET |