FDD8870 - Fairchild Semiconductor

FDD8870 N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Features • r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A • r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A • Hi.

Features

• r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A
• r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A
• High performance trench technology for extremely low r DS(ON)
• Low gate charge Applications
• DC/DC converters
• High power and current handling capability D G S I-PAK (TO-251AA) G D S G D D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T C = 25°C unless otherwise noted Symbol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (T C = 25 o C, V GS = 10V) (Note 1) ID Continuous (T C = 25 o C, V GS = 4.5V) (Note 1) Continuous (T amb = 25 o C, VGS = 10 V, with.