This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features • rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A • rDS(ON) = 4.4mΩ, VGS .
• rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
D G
S DTO-P-2A5K2 (TO-252)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed
EAS
Single Pulse Avalanch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDD8870 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
2 | FDD8870_F085 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
3 | FDD8874 |
INCHANGE |
N-Channel MOSFET | |
4 | FDD8874 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDD8876 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
6 | FDD8878 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDD8880 |
ON Semiconductor |
N-Channel MOSFET | |
8 | FDD8880 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
9 | FDD8882 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDD8896 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
11 | FDD8896 |
ON Semiconductor |
N-Channel Power MOSFET | |
12 | FDD8896-F085 |
On Semiconductor |
N-Channel MOSFET |