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FDC633N |
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| Part Number | FDC633N |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-... |
| Features |
5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S D D
1 6
.63
3
2 5
G SuperSOT
TM
pin 1
D D
3
4
-6
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maxi... |
| Document |
 FDC633N Data Sheet
PDF 278.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6330L |
Fairchild Semiconductor |
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| 2 | FDC6330L |
ON Semiconductor |
Integrated Load Switch |
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| 3 | FDC6331L |
Fairchild Semiconductor |
Integrated Load Switch |
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| 4 | FDC6331L |
ON Semiconductor |
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| 5 | FDC6332L |
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Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET |
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