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FC808 |
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| Part Number | FC808 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number :EN4338A FC808 Silicon Epitaxial Plannar Type High-Speed Switching Composite Diode (Cathode Common) Features · Composite type with 4 diodes contained in the CP package currently in u... |
| Features |
· Composite type with 4 diodes contained in the CP package currently in use, saving the mounting space greatly. · Fast switching speed. Package Dimensions unit:mm 1250A [FC808] 1:Anode 2:Anode 3:Anode 4:Cathode 5:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Reverse Voltage Surge Current Average Rectified Current Peak Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFSM IO* IFM* P* Tj Tstg 10ms* Conditions Ratings SANYO:CP5 Unit 85 80 2 100 300 200 150 V V A mA mA mW ˚C ˚C –55 to +150 Note) *:... |
| Document |
 FC808 Data Sheet
PDF 47.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FC801 |
Sanyo Semicon Device |
Composite Diode for High-Speed Switching Applications |
|
| 2 | FC802 |
Sanyo Semicon Device |
Composite Diode for High-Speed Switching Applications |
|
| 3 | FC803 |
Sanyo Semicon Device |
30V/ 70mA Rectifier |
|
| 4 | FC804 |
Sanyo Semicon Device |
30V/ 200mA Rectifier |
|
| 5 | FC805 |
Sanyo Semicon Device |
30V/ 500mA Rectifier |
|