Ordering number :EN3193A FC803 Silicon Schottky Barrier Diode 30V, 70mA Rectifier Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC803 is formed with twi chips, each being equivalent t.
· Low forward voltage (VF max=0.55V) .
· Fast reverse recorvery time (trr max=10ns) .
· Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC803 is formed with twi chips, each being equivalent to the SB007W03C, placed in one package.
Package Dimensions
unit:mm 1233A
[FC803]
1:Anode 2:Anode 3:Cathode 4:Anode 5:Anode 6:Cathode SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Juncti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FC801 |
Sanyo Semicon Device |
Composite Diode for High-Speed Switching Applications | |
2 | FC802 |
Sanyo Semicon Device |
Composite Diode for High-Speed Switching Applications | |
3 | FC804 |
Sanyo Semicon Device |
30V/ 200mA Rectifier | |
4 | FC805 |
Sanyo Semicon Device |
30V/ 500mA Rectifier | |
5 | FC806 |
Sanyo Semicon Device |
50V/ 100mA Rectifier | |
6 | FC807 |
Sanyo Semicon Device |
High-Speed Switching Composite Diode Anode Common | |
7 | FC808 |
Sanyo Semicon Device |
High-Speed Switching Composite Diode Cathode Common | |
8 | FC809 |
Sanyo Semicon Device |
30V/ 70mA Rectifier | |
9 | FC80960HA25SL2GU |
Intel Corporation |
80960HA/HD/HT 32-Bit High-Performance Superscalar Processor | |
10 | FC80960HA33SL2GV |
Intel Corporation |
80960HA/HD/HT 32-Bit High-Performance Superscalar Processor | |
11 | FC80960HA40SL2GW |
Intel Corporation |
80960HA/HD/HT 32-Bit High-Performance Superscalar Processor | |
12 | FC80960HD32SL2GL |
Intel Corporation |
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