Ordering number :EN3400B FC805 Silicon Schottky Barrier Diode 30V, 500mA Rectifier Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC805 is formed with two chips, each being equivalent to the S.
· Low forward voltage (VF max=0.55V) .
· Fast reverse recorvery time (trr max=10ns) .
· Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly.
· The FC805 is formed with two chips, each being equivalent to the SB05
–03C, placed in one package.
Package Dimensions
unit:mm 1236A
[FC805]
1:Cathode 2:Cathode 3:Anode 4:No Contact 5:Anode SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperatu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FC801 |
Sanyo Semicon Device |
Composite Diode for High-Speed Switching Applications | |
2 | FC802 |
Sanyo Semicon Device |
Composite Diode for High-Speed Switching Applications | |
3 | FC803 |
Sanyo Semicon Device |
30V/ 70mA Rectifier | |
4 | FC804 |
Sanyo Semicon Device |
30V/ 200mA Rectifier | |
5 | FC806 |
Sanyo Semicon Device |
50V/ 100mA Rectifier | |
6 | FC807 |
Sanyo Semicon Device |
High-Speed Switching Composite Diode Anode Common | |
7 | FC808 |
Sanyo Semicon Device |
High-Speed Switching Composite Diode Cathode Common | |
8 | FC809 |
Sanyo Semicon Device |
30V/ 70mA Rectifier | |
9 | FC80960HA25SL2GU |
Intel Corporation |
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10 | FC80960HA33SL2GV |
Intel Corporation |
80960HA/HD/HT 32-Bit High-Performance Superscalar Processor | |
11 | FC80960HA40SL2GW |
Intel Corporation |
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12 | FC80960HD32SL2GL |
Intel Corporation |
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