FJN965 |
Part Number | FJN965 |
Manufacturer | Fairchild Semiconductor |
Description | FJN965 FJN965 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxi... |
Features |
VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 23 230 150 Min. 20 7 0.1 1 0.1 600 1 V MHz pF Typ. Max. Units V V µA µA µA
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJN965
Typical Characteristics
14
1.8
IB=200mA
12 1.6
VCE=2V
IC[mA], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0
8
Ta=125 C
o
25 C
o
-40 C
o
6
4
IB=20mA
2
0 0 2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Base-Emitter O... |
Document |
FJN965 Data Sheet
PDF 83.93KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FJN13003 |
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NPN Silicon Transistor Planar Silicon Transistor | |
2 | FJN3301R |
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3 | FJN3302R |
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4 | FJN3303 |
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5 | FJN3303R |
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