2SK2925S |
Part Number | 2SK2925S |
Manufacturer | Hitachi Semiconductor |
Description | 2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate driv... |
Features |
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.5 20 150 –55 to +150 Un... |
Document |
2SK2925S Data Sheet
PDF 53.82KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | 2SK2925 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2925 |
Renesas |
Silicon N-Channel MOSFET | |
3 | 2SK2925L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2925L |
Renesas |
Silicon N-Channel MOSFET | |
5 | 2SK2925S |
Guangdong Kexin Industrial |
N-Channel Silicon MOSFET |