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2SK2788 |
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| Part Number | 2SK2788 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switch... |
| Features |
• Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)* 2 1 Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Pch* Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Wh... |
| Document |
 2SK2788 Data Sheet
PDF 43.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2782 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK2788 |
Renesas |
Silicon N-Channel MOSFET |
|
| 3 | 2SK2789 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 4 | 2SK270 |
Toshiba |
Silicon N-Channel Transistor |
|
| 5 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET |
|