2SK2789 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2789 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) l High forward transfer admittance : |Yfs| = 16 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) l Enha.
s Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.08 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 428 µH, IAR = 27 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 1 2002-06-27 Electrical Characteristics (Ta = 25°C) 2SK2789 Characteri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2782 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK2788 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK2788 |
Renesas |
Silicon N-Channel MOSFET | |
4 | 2SK270 |
Toshiba |
Silicon N-Channel Transistor | |
5 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK2701 |
Sanken electric |
MOSFET | |
7 | 2SK2701A |
INCHANGE |
N-Channel MOSFET | |
8 | 2SK2702 |
Sanken electric |
MOSFET | |
9 | 2SK2703 |
Sanken electric |
MOSFET | |
10 | 2SK2704 |
Sanken electric |
MOSFET | |
11 | 2SK2705 |
Sanken electric |
MOSFET | |
12 | 2SK2706 |
Sanken electric |
MOSFET |