2SK1306 |
Part Number | 2SK1306 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK1306 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V sour... |
Features |
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1306 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Ts... |
Document |
2SK1306 Data Sheet
PDF 34.24KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK1300 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1300 |
Renesas |
Silicon N-Channel MOSFET | |
3 | 2SK1301 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1302 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1303 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |