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2SJ409 |
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| Part Number | 2SJ409 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven ... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SJ409(L), 2SJ409(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch... |
| Document |
 2SJ409 Data Sheet
PDF 28.88KB |
| Distributor | Stock | Price | Buy |
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