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BAS31 |
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| Part Number | BAS31 |
| Manufacturer | Fairchild Semiconductor |
| Description | BAS31 Discrete POWER & Signal Technologies BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 2 SOT-23 1 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteris... |
| Features |
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
BAS31 350 2.8 357
Units
mW mW/ °C °C/W
©1997 Fairchild Semiconductor Corporation
BAS31
High Voltage General Purpose Diode
(continued)
Electrical Characteristics
Symbol
BV IR VF
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage Reverse Current Forward Voltage
Test Conditions
I R = 1.0 mA VR = 90 V VR = 90 V, TA = 150°C I F = 10 mA I F = 50 mA I F = 100 mA I F = 200 mA I F = 400 mA VR = 0, f = 1.0 MHz I F = IR = 30 mA, VR = 6.0 V, I RR = 3.0 ... |
| Document |
 BAS31 Data Sheet
PDF 34.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS3005A |
Infineon Technologies |
Low VF Schottky Diode |
|
| 2 | BAS3005A-02V |
Infineon |
Low VF Schottky Diode |
|
| 3 | BAS3005B |
Infineon Technologies |
Medium Power AF Schottky Diode |
|
| 4 | BAS3005B-02LRH |
Infineon |
Medium Power AF Schottky Diode |
|
| 5 | BAS3005B-02V |
Infineon |
Medium Power AF Schottky Diode |
|