HM628511HC |
Part Number | HM628511HC |
Manufacturer | Hitachi Semiconductor |
Description | The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit ... |
Features |
• Single 5.0 V supply: 5.0 V ± 10 % • Access time: 10 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 140 mA (max) • TTL standby current: 40 mA (max) • CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version) • Data retension current: 0.8 mA (max) (L-version) • Data retension voltage: 2 V (min) (L-version) • Center VCC and VSS type pinout Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sale... |
Document |
HM628511HC Data Sheet
PDF 69.39KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM628511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
2 | HM628511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
3 | HM628512 |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
4 | HM628512A |
Hitachi Semiconductor |
4M SRAM (512 KWORD X 8 BIT) | |
5 | HM628512AI |
Hitachi Semiconductor |
524288 x 8-Bit High Speed CMOS SRAM |