NCEP039N10M |
Part Number | NCEP039N10M |
Manufacturer | NCE Power Semiconductor |
Description | The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are mini... |
Features |
● VDS =100V,ID =135A RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V RDS(ON)=3.5mΩ , typical (TO-263)@ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● Pb-free Mold Compound 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP039N10M NCEP039N10M TO-220 - - NCEP039N10MD NCEP039N10MD TO-263 - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol - Limit... |
Document |
NCEP039N10M Data Sheet
PDF 333.92KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | NCEP039N10MD |
NCE Power Semiconductor |
N-Channel Power MOSFET | |
2 | NCEP0112AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
3 | NCEP0114AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
4 | NCEP0116AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
5 | NCEP0140AG |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET |