NCE6005S |
Part Number | NCE6005S |
Manufacturer | VBsemi |
Description | NCE6005S-VB www.VBsemi.com NCE6005S-VB Datasheet Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration SO... |
Features |
• TrenchFET® power MOSFET • 100 % Rg and UIS tested D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 7 4 3.6 28 18 16.2 4... |
Document |
NCE6005S Data Sheet
PDF 234.98KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NCE6005AR |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE6005AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE6005R |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
4 | NCE6005S |
NCE Power |
N-Channel Enhancement Mode Power MOSFET | |
5 | NCE6003 |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET |