Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
AP2306N |
Click to view a larger image
| Part Number | AP2306N |
| Manufacturer | VBsemi |
| Description | AP2306N AP2306N N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.050 at VGS = 1.8 V ID (A)e 6a 6a 5.6 Qg (Typ.) ... |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 7... |
| Document |
 AP2306N Data Sheet
PDF 322.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2306AGEN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP2306AGEN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP2306AGN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP2306AGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE |
|
| 5 | AP2306AGN-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|