NVH4L040N120M3S ON Semiconductor SiC MOSFET Datasheet, en stock, prix

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NVH4L040N120M3S

ON Semiconductor
NVH4L040N120M3S
NVH4L040N120M3S NVH4L040N120M3S
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Part Number NVH4L040N120M3S
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L NVH4L040N120M3S Features • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75...
Features
• Typ. RDS(on) = 40 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 75 nC)
• High Speed Switching with Low Capacitance (Coss = 80 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications
• Automotive On Board Charger
• Automotive DC−DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −10/+22 V Recommended Operation Values TC<175...

Document Datasheet NVH4L040N120M3S Data Sheet
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