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NTH4L032N065M3S |
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| Part Number | NTH4L032N065M3S |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO247-4L NTH4L032N065M3S Features • Typical RDS(ON) = 32 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 5... |
| Features |
• Typical RDS(ON) = 32 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Applications • SMPS, Solar Inverters, UPS, Energy Storage, EV Charging Infrastructure MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) VDSS 650 V VGS −8/+22 V TC = 25°C ID 23 A Power Dissipation Co... |
| Document |
 NTH4L032N065M3S Data Sheet
PDF 184.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NTH4L030N120M3S |
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| 2 | NTH4L013N120M3S |
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| 3 | NTH4L014N120M3P |
ON Semiconductor |
SiC MOSFET |
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| 4 | NTH4L015N065SC1 |
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| 5 | NTH4L020N090SC1 |
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