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NTH4L030N120M3S |
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| Part Number | NTH4L030N120M3S |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L NTH4L030N120M3S Features • Typ. RDS(on) = 29 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107... |
| Features |
• Typ. RDS(on) = 29 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS (Switch Mode Power Supplies) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain... |
| Document |
 NTH4L030N120M3S Data Sheet
PDF 327.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NTH4L032N065M3S |
ON Semiconductor |
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| 2 | NTH4L013N120M3S |
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SiC MOSFET |
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| 3 | NTH4L014N120M3P |
ON Semiconductor |
SiC MOSFET |
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| 4 | NTH4L015N065SC1 |
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SiC MOSFET |
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| 5 | NTH4L020N090SC1 |
ON Semiconductor |
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