IS34ML04G081 |
Part Number | IS34ML04G081 |
Manufacturer | ISSI |
Description | The IS34/35ML4G081 is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage... |
Features |
Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 400us - typical - Block Erase time: 3ms – typical Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 10 mA Active Read Current - 8 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extend... |
Document |
IS34ML04G081 Data Sheet
PDF 1.40MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS34ML04G084 |
ISSI |
4Gb(x8) 3.3V NAND FLASH MEMORY | |
2 | IS34ML04G088 |
ISSI |
4Gb SLC-8b ECC | |
3 | IS34ML04G0168 |
ISSI |
4Gb SLC-8b ECC | |
4 | IS34ML01G081 |
ISSI |
1Gb (x8) 3.3V NAND FLASH MEMORY | |
5 | IS34ML01G084 |
ISSI |
1Gb(x8) 3.3V NAND FLASH MEMORY |