The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes). Data in the page mode can be read out at 25ns cycle time per Word. The I/O pins serve as the ports for address a.
• Flexible & Efficient Memory Architecture
- Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048
• Highest performance - Read Performance:
- Random Read: 25us (Max.) - Serial Access: 25ns (Max.)
- Write Performance:
- Program time: 300us (typ.), 700us (max.) - Block Erase time: 3.5ms (typ.), 10ms (max.)
• Voltage and Temp. Ranges - Single 3.3V (2.7V to 3.6V) Volt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS34ML04G081 |
ISSI |
4Gb 3.3V X8 NAND FLASH MEMORY | |
2 | IS34ML04G084 |
ISSI |
4Gb(x8) 3.3V NAND FLASH MEMORY | |
3 | IS34ML04G0168 |
ISSI |
4Gb SLC-8b ECC | |
4 | IS34ML01G081 |
ISSI |
1Gb (x8) 3.3V NAND FLASH MEMORY | |
5 | IS34ML01G084 |
ISSI |
1Gb(x8) 3.3V NAND FLASH MEMORY | |
6 | IS34ML02G084 |
ISSI |
2Gb(x8) 3.3V NAND FLASH MEMORY | |
7 | IS34MC01GA08 |
ISSI |
3.3V 1Gb SLC NAND Flash Memory | |
8 | IS34MC01GA16 |
ISSI |
3.3V 1Gb SLC NAND Flash Memory | |
9 | IS34MW01G084 |
ISSI |
1Gb (x8/x16) 1.8V NAND FLASH MEMORY | |
10 | IS34MW01G164 |
ISSI |
1Gb (x8/x16) 1.8V NAND FLASH MEMORY | |
11 | IS34MW02G084 |
ISSI |
2Gb(x8/x16) 1.8V NAND FLASH MEMORY | |
12 | IS34MW02G164 |
ISSI |
2Gb(x8/x16) 1.8V NAND FLASH MEMORY |