IS34ML04G084 IS35ML04G084 4Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G084 4Gb (x8) 3.3V NAND FLASH MEMORY with 4b ECC FEATURES Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) .
Flexible & Efficient Memory Architecture
- Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell
Highest performance - Read Performance
- Random Read: 25us (Max.) - Serial Access: 25ns (Max.)
- Write Performance
- Program time: 300us - typical - Block Erase time: 3ms
– typical
Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 10 mA Active Read Current - 8 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extend.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS34ML04G081 |
ISSI |
4Gb 3.3V X8 NAND FLASH MEMORY | |
2 | IS34ML04G088 |
ISSI |
4Gb SLC-8b ECC | |
3 | IS34ML04G0168 |
ISSI |
4Gb SLC-8b ECC | |
4 | IS34ML01G081 |
ISSI |
1Gb (x8) 3.3V NAND FLASH MEMORY | |
5 | IS34ML01G084 |
ISSI |
1Gb(x8) 3.3V NAND FLASH MEMORY | |
6 | IS34ML02G084 |
ISSI |
2Gb(x8) 3.3V NAND FLASH MEMORY | |
7 | IS34MC01GA08 |
ISSI |
3.3V 1Gb SLC NAND Flash Memory | |
8 | IS34MC01GA16 |
ISSI |
3.3V 1Gb SLC NAND Flash Memory | |
9 | IS34MW01G084 |
ISSI |
1Gb (x8/x16) 1.8V NAND FLASH MEMORY | |
10 | IS34MW01G164 |
ISSI |
1Gb (x8/x16) 1.8V NAND FLASH MEMORY | |
11 | IS34MW02G084 |
ISSI |
2Gb(x8/x16) 1.8V NAND FLASH MEMORY | |
12 | IS34MW02G164 |
ISSI |
2Gb(x8/x16) 1.8V NAND FLASH MEMORY |