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LMG3411R150 |
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| Part Number | LMG3411R150 |
| Manufacturer | Texas Instruments (https://www.ti.com/) |
| Description | The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this devi... |
| Features |
•1 TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and layout – Adjustable drive strength for switching performance and EMI control – Digital fault status output signal – Only +12 V of unregulated supply needed • Integrated gate driver – Zero common source inductance – 20-ns propagation delay for high-frequency design – Trimmed gate bias voltage to compensate for threshold v... |
| Document |
 LMG3411R150 Data Sheet
PDF 1.54MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LMG3411R050 |
Texas Instruments |
Integrated GaN Fet Power Stage |
|
| 2 | LMG3411R070 |
Texas Instruments |
GaN |
|
| 3 | LMG3410R050 |
Texas Instruments |
Integrated GaN Fet Power Stage |
|
| 4 | LMG3410R070 |
Texas Instruments |
GaN |
|
| 5 | LMG3410R150 |
Texas Instruments |
GaN FET |
|