VBT3045CBP-M3 |
Part Number | VBT3045CBP-M3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com VBT3045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K 2 ... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial ... |
Document |
VBT3045CBP-M3 Data Sheet
PDF 99.24KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBT3045CBP-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VBT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
3 | VBT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VBT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VBT3045BP-M3 |
Vishay |
Trench MOS Barrier Schottky Rectifier |