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SCTW100N120G2AG |
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| Part Number | SCTW100N120G2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code SCTW100N120G2AG
VDS 1200 V
RDS(on)typ. 30 mΩ
ID 75 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
• AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Traction for inverters • DC-DC converters • Solar inverters • OBC AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area an... |
| Document |
 SCTW100N120G2AG Data Sheet
PDF 212.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SCTW100N65G2AG |
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silicon carbide Power MOSFET |
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| 2 | SCTW35N65G2V |
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| 3 | SCTW35N65G2VAG |
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| 4 | SCTW40N120G2V |
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| 5 | SCTW40N120G2VAG |
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