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IAUC100N04S6N028 |
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| Part Number | IAUC100N04S6N028 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IAUC100N04S6N028 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 2.8 mW 100 A PG-TDSON-8 • N-channel - Enhance... |
| Features |
• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 2.8 mW 100 A PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Product (RoHS compliant) 1 • 100% Avalanche tested Type Package IAUC100N04S6N028 PG-TDSON-8 Marking 6N04N028 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche curre... |
| Document |
 IAUC100N04S6N028 Data Sheet
PDF 666.28KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IAUC100N04S6N015 |
Infineon |
Power Transistor |
|
| 2 | IAUC100N04S6L020 |
Infineon |
Power Transistor |
|
| 3 | IAUC100N04S6L025 |
Infineon |
Power Transistor |
|
| 4 | IAUC100N08S5N034 |
Infineon |
Power Transistor |
|
| 5 | IAUC100N08S5N043 |
Infineon |
Power Transistor |
|