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P4N150 |
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| Part Number | P4N150 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened l... |
| Features |
Type
VDSS RDS(on) max ID
Pw
STFW4N150 1500 V
<7Ω
4 A 63 W
STP4N150 1500 V
<7Ω
4 A 160 W
STW4N150 1500 V
<7Ω
4 A 160 W
■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plastic packages ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s p... |
| Document |
 P4N150 Data Sheet
PDF 754.03KB |
| Distributor | Stock | Price | Buy |
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