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TK39J60W |
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| Part Number | TK39J60W |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor TK39J60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.065Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.065Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 38.8 A IDM Drain Current-Single Pulsed 155 A PD Total Dissipation @TC=25℃ 270 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150... |
| Document |
 TK39J60W Data Sheet
PDF 265.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK39J60W |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | TK39J60W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TK39J60W5 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 5 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|